Yeah the next few generations of EUV nodes will essentially bring the area reductions just by utilising EUV on more layers & transistor types so more types of unit scale down(Rather than scaling all existing units down further), we've seen pretty non-linear scaling across various blocks as we've become more reliant on multi-patterning, it's partly why 14nm is still better at some things than 7nm, or why some types of processor/unit scales down much better than others, though TSMC 7nm+(Or just 7nm for Samsung's first EUV node) should slowly start to change this to bring things more uniform.