GDDR3 timings?

K404

New member


Hey all! Thats what I`ve got at the mo... thing is...some of those numbers are very high, and some of them I do not recognise. Does anyone have any info on this, or hints and tips on changing them? Its pretty high-end, I know, but if its gonna help a benchmark score, it might be worth a go.

Obviously taking the RAM as high as it`ll go at the existing timings with a certain voltage will prob be the best performance that can be had, but knowledge is always good :)

Cheers,

Kenny
 
Well... the lower I set them, in theory the lower the OC potential will be. Plus, flashing a BIOS to try every change aint as easy as opening A64 tweaker like for syste memory :) Might go hunting for definitions of those timings later on :)
 
name='K404' said:
Well... the lower I set them, in theory the lower the OC potential will be. Plus, flashing a BIOS to try every change aint as easy as opening A64 tweaker like for syste memory :) Might go hunting for definitions of those timings later on :)

Copy details over for any timing information that you find MVKTECH is a good place to start.

Cheers

Mav
 
From what i`ve found so far... theres different brands of GDDR3 and each has a different base set of timings.

Each sub-operation will need a set minimum physical time to complete and hold before the next operation can begin. so 1/clock speed (of memory) x (no.cycles) MUST be greater than or equal to the physical time stated for the memory chips used to maintain stability.

Timings: abbreviations and definitions

tRC- ?

tRFC- Row Cycle Time/ Auto refresh

tRAS- Row Active time (probaly minimum)

tRP- Row Precharge

tRCDRD- RAS to CAS delay to read (minimum)

tRCDWR- RAS to CAS delay to write (minimum)

tRRD- ?

Will update this when I find out more about physical timings and any hints or tips on ideal settings. :)
 
I dont have the explicit rating of my particular memory, but I could guess, based on the stock speeds and max OC on stock voltage

I have a list of all the data for the 4 different chip types, but I dont wanan just copy it from the site I found it on. Am waiting for permission.

:)
 
heres the details for the 4kinds of Samsung GDDR3 memory. Will find out the rated speeds which should let me get a rough value for the physical times required...which could take a while with a calculator :)

K4J55323QF-GC12 / K4J55323QG-BC12

tRC 35 // Row cycle time(min) - operation (tCK)

tRFC 45 // Row cycle time(min) - Auto Refresh (tCK)

tRASmin 25 // Row active minimum time (tCK)

tRASmax 100000 // Row active maximum time (tCK)

tRCDRD 12 // Ras to cas delay(min) for Read (tCK)

tRCDWR 7 // Ras to cas delay(min) for Write (tCK)

tRP 10 // Row precharge time(min) (tCK)

tRRD 9 // Row to row delay(min) (tCK)

tWR 7 // Last data in Row precharge (7 tCK)

tCDLR 5 // Last data in to Read delay (6 tCK)

tCDLW 0 // Last data in to Write delay (0 tCK)

tCCD 2 // Col. address to col. address delay (3 tCK)

tCKmin 1.2 // Clock minimum cycle time (ns) - CL=9

tCKmax 6 // Clock maximun cycle time (ns) - CL=9

K4J55323QF-GC14 / K4J55323QG-BC14

tGR 2 // Gapless 2 tCK

tRTW 14 // Read to Write at same bank - CL=9tCK, tCDLR=5tCK

tRC 31 // Row cycle time(min) - operation (tCK)

tRFC 39 // Row cycle time(min) - Auto Refresh (tCK)

tRASmin 22 // Row active minimum time (tCK)

tRASmax 100000 // Row active maximum time (tCK)

tRCDRD 10 // Ras to cas delay(min) for Read (tCK)

tRCDWR 6 // Ras to cas delay(min) for Write (tCK)

tRP 9 // Row precharge time(min) (tCK)

tRRD 8 // Row to row delay(min) (tCK)

tWR 6 // Last data in Row precharge (7 tCK)

tCDLR 5 // Last data in to Read delay (6 tCK)

tCDLW 0 // Last data in to Write delay (0 tCK)

tCCD 2 // Col. address to col. address delay (3 tCK)

tCKmin 1.4 // Clock minimum cycle time (ns) - CL=9

tCKmax 6 // Clock maximun cycle time (ns) - CL=9

K4J55323QF-GC16 / K4J55323QG-BC16

tGR 2 // Gapless 2 tCK

tRTW 12 // Read to Write at same bank - CL=8tCK, tCDLR=4tCK

tRC 27 // Row cycle time(min) - operation (tCK)

tRFC 34 // Row cycle time(min) - Auto Refresh (tCK)

tRASmin 19 // Row active minimum time (tCK)

tRASmax 100000 // Row active maximum time (tCK)

tRCDRD 9 // Ras to cas delay(min) for Read (tCK)

tRCDWR 5 // Ras to cas delay(min) for Write (tCK)

tRP 8 // Row precharge time(min) (tCK)

tRRD 7 // Row to row delay(min) (tCK)

tWR 5 // Last data in Row precharge (7 tCK)

tCDLR 4 // Last data in to Read delay (6 tCK)

tCDLW 0 // Last data in to Write delay (0 tCK)

tCCD 2 // Col. address to col. address delay (3 tCK)

tCKmin 1.6 // Clock minimum cycle time (ns) - CL=8

tCKmax 6 // Clock maximun cycle time (ns) - CL=8

K4J55323QF-GC20 / K4J55323QG-BC20

tGR 2 // Gapless 2 tCK

tWTR 10 // Read to Write at same bank - CL=7tCK, tCDLR=3tCK

tRC 21 // Row cycle time(min) - operation (tCK)

tRFC 27 // Row cycle time(min) - Auto Refresh (tCK)

tRASmin 15 // Row active minimum time (tCK)

tRASmax 100000 // Row active maximum time (tCK)

tRCDRD 7 // Ras to cas delay(min) for Read (tCK)

tRCDWR 4 // Ras to cas delay(min) for Write (tCK)

tRP 6 // Row precharge time(min) (tCK)

tRRD 5 // Row to row delay(min) (tCK)

tCDLR 3 // Last data in to Read delay (6 tCK)

tCDLW 0 // Last data in to Write delay (0 tCK)

tCCD 2 // Col. address to col. address delay (2 tCK)

tCKmin 2 // Clock minimum cycle time (ns) - CL=9

tCKmax 6 // Clock maximun cycle time (ns) - CL=9

The lines highlighted in red are the maxand minimum clock cycle times. The inverse of these numbers gives the rated frequency. Give me a bit and i`ll post them too. :)

Thanks to Sentential at OCF for letting me use this data. Sorry if the thanks are inappropriate for this forum, but I cant use information without acknowledging the source.

Kenny
 
Crumbs, i'm not sure i have enough dedication to use them to max out my scores, i do enough maths as it is already lol.

G
 
So do I...this should be a walk in the park for us! :)

Not even sure if much of the stuff I`ve posted even matters!
 
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