heres the details for the 4kinds of Samsung GDDR3 memory. Will find out the rated speeds which should let me get a rough value for the physical times required...which could take a while with a calculator
K4J55323QF-GC12 / K4J55323QG-BC12
tRC 35 // Row cycle time(min) - operation (tCK)
tRFC 45 // Row cycle time(min) - Auto Refresh (tCK)
tRASmin 25 // Row active minimum time (tCK)
tRASmax 100000 // Row active maximum time (tCK)
tRCDRD 12 // Ras to cas delay(min) for Read (tCK)
tRCDWR 7 // Ras to cas delay(min) for Write (tCK)
tRP 10 // Row precharge time(min) (tCK)
tRRD 9 // Row to row delay(min) (tCK)
tWR 7 // Last data in Row precharge (7 tCK)
tCDLR 5 // Last data in to Read delay (6 tCK)
tCDLW 0 // Last data in to Write delay (0 tCK)
tCCD 2 // Col. address to col. address delay (3 tCK)
tCKmin 1.2 // Clock minimum cycle time (ns) - CL=9
tCKmax 6 // Clock maximun cycle time (ns) - CL=9
K4J55323QF-GC14 / K4J55323QG-BC14
tGR 2 // Gapless 2 tCK
tRTW 14 // Read to Write at same bank - CL=9tCK, tCDLR=5tCK
tRC 31 // Row cycle time(min) - operation (tCK)
tRFC 39 // Row cycle time(min) - Auto Refresh (tCK)
tRASmin 22 // Row active minimum time (tCK)
tRASmax 100000 // Row active maximum time (tCK)
tRCDRD 10 // Ras to cas delay(min) for Read (tCK)
tRCDWR 6 // Ras to cas delay(min) for Write (tCK)
tRP 9 // Row precharge time(min) (tCK)
tRRD 8 // Row to row delay(min) (tCK)
tWR 6 // Last data in Row precharge (7 tCK)
tCDLR 5 // Last data in to Read delay (6 tCK)
tCDLW 0 // Last data in to Write delay (0 tCK)
tCCD 2 // Col. address to col. address delay (3 tCK)
tCKmin 1.4 // Clock minimum cycle time (ns) - CL=9
tCKmax 6 // Clock maximun cycle time (ns) - CL=9
K4J55323QF-GC16 / K4J55323QG-BC16
tGR 2 // Gapless 2 tCK
tRTW 12 // Read to Write at same bank - CL=8tCK, tCDLR=4tCK
tRC 27 // Row cycle time(min) - operation (tCK)
tRFC 34 // Row cycle time(min) - Auto Refresh (tCK)
tRASmin 19 // Row active minimum time (tCK)
tRASmax 100000 // Row active maximum time (tCK)
tRCDRD 9 // Ras to cas delay(min) for Read (tCK)
tRCDWR 5 // Ras to cas delay(min) for Write (tCK)
tRP 8 // Row precharge time(min) (tCK)
tRRD 7 // Row to row delay(min) (tCK)
tWR 5 // Last data in Row precharge (7 tCK)
tCDLR 4 // Last data in to Read delay (6 tCK)
tCDLW 0 // Last data in to Write delay (0 tCK)
tCCD 2 // Col. address to col. address delay (3 tCK)
tCKmin 1.6 // Clock minimum cycle time (ns) - CL=8
tCKmax 6 // Clock maximun cycle time (ns) - CL=8
K4J55323QF-GC20 / K4J55323QG-BC20
tGR 2 // Gapless 2 tCK
tWTR 10 // Read to Write at same bank - CL=7tCK, tCDLR=3tCK
tRC 21 // Row cycle time(min) - operation (tCK)
tRFC 27 // Row cycle time(min) - Auto Refresh (tCK)
tRASmin 15 // Row active minimum time (tCK)
tRASmax 100000 // Row active maximum time (tCK)
tRCDRD 7 // Ras to cas delay(min) for Read (tCK)
tRCDWR 4 // Ras to cas delay(min) for Write (tCK)
tRP 6 // Row precharge time(min) (tCK)
tRRD 5 // Row to row delay(min) (tCK)
tCDLR 3 // Last data in to Read delay (6 tCK)
tCDLW 0 // Last data in to Write delay (0 tCK)
tCCD 2 // Col. address to col. address delay (2 tCK)
tCKmin 2 // Clock minimum cycle time (ns) - CL=9
tCKmax 6 // Clock maximun cycle time (ns) - CL=9
The lines highlighted in red are the maxand minimum clock cycle times. The inverse of these numbers gives the rated frequency. Give me a bit and i`ll post them too.
Thanks to Sentential at OCF for letting me use this data. Sorry if the thanks are inappropriate for this forum, but I cant use information without acknowledging the source.
Kenny