Its not an article, its an entry in an encylopedia. They usually don't post test results. I see your point tho and I will make the argument, that this is just how NAND Flash works: It is proven (I'm too lazy to find a link, but you may always use google yourself) that NAND Flash Cells can survive only 100,000 delete cycles if they're used as single level cells. They can survive 10% of that (10,000 delete cycles) when they're used as multi level cells (two bits are stored in one flash cell, this is achieved by storing the information as one of 4 possible voltage levels). And Triple Level Cells can survive another 5% of that (500 writes approximately, depending if the controller stops writes earlier). This is because there are 3 bits stored in a single cell, represented by 8 possible voltage levels. This requires some serious IO logic and because the way flash cells work (isolating an electric charge by means of quantum tunneling) it degrades the physical cell more than it would for mlc or slc respectively.
And even if it was 1000 writes, if you are downloading a lot of stuff, or watch tv shows and movies on the pc when this drive holds the temp folder, you will get to the 1000 writes (or 500 writes) relatively quickly.